摘要
研制了一种平面集成多晶发射极SiGe HBT,并对SiGe HBT设计进行了研究分析。给出了双极晶体管的结构和关键工艺参数,并进行了流片测试,结果表明,在室温下电流增益β大于1500,最大达到3000,Vceo为5V,厄利电压VA大于10V,βVA乘积达到15000以上。这种器件对多晶Si发射极As杂质浓度分布十分敏感。
A planar integrated emitter polycrystalline silicon-germanium heterojunction bipolar transistor was developed. The design of SiC, e HBT was carried out and analyzed. The bipolar transistor structure and key process parameters were studied and analyzed, and finally the tape out was tested. The results show that at room temperature current gain β is greater than 1 500, and the greatest is up to 3 000, Vceo is 5 V,Overly-voltage VA is greater than 10 V, βVA product reaches more than 15 000. This device is very sensitive to the arsenic impurity concentration distribution of polysilicon emitter.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第1期58-62,共5页
Semiconductor Technology
