阴离子掺杂钨酸铅晶体的生长与发光性能研究

Study on Growth and Luminescence Properties of PbWO_4 Crystal Doped with Negative Ions

本文报道了阴离子F-,Cl-,I-和S2-掺杂的PbWO4晶体的生长与发光性能。通过对掺杂PbWO4晶体的X射线粉末衍射、紫外可见区的透过光谱、光致激发、光产额和发光衰减特性进行了测试表征,结果表明:F-掺杂能使PbWO4晶体在短波方向的透过率明显提高,显著提高PbWO4晶体的发光强度,但增加的发光强度主要来自于慢发光的贡献。而随着掺杂阴离子半径和电荷数的增加,PbWO4晶体的发光强度逐渐降低,并且PbWO4晶体吸收截止边逐渐向长波方向移动。

This article presents the growth and luminescence properties of negative F-, CI-, I- and S2 ions doped PbWO4 crystals. Based on the results of measuring their X-ray powder diffraction, UV-VIS optical transmittance, photoluminescence, light yield and luminescence deeay time, it can been seen that F ion doping can obviously increase the optical transmittance at the 350-400 nm range, and enhance the luminescence intensity of PbWO4 crystal, but the increase of the luminous intensity is mainly attributed to the slow illumination. Along with the increase of doped negative ions radius and the electric charge number, however, the luminescence intensity of PbWO4 crystal decrease gradually and evident red-shift of the absorption edge is observed.