In掺杂对化学共沉淀法合成的SnO_2粉体Zeta电位的影响(英文)

Effect of In Doping on Zeta Potentials of Tin Oxide Powders Synthesized by Chemical Coprecipitation Method

以四氯化锡、三氯化铟和氨水为原料,采用化学共沉淀法制备了In掺杂SnO2粉体。实验采用XRD和Zeta电位分析仪对In掺杂SnO2粉体的物化性能进行了研究。结果表明:当In掺杂浓度为2 mol%时,掺杂SnO2粉体具有较低的Zeta电位。相对于纯SnO2粉体,In掺杂改变了SnO2的晶胞参数并增大了其晶胞体积。

In-doped tin oxide powders were prepared by a chemical coprecipitation process using tin tetrachloride, indium trichloride and ammonia as raw materials. The properties of SnO2-based powders doped with In were studied systematically by X-ray diffraction （XRD） and Zeta potential analyzer. The results showed Zeta potential of In-doped SnO2 powders is the lowest when the fraction of In-doped is 2 mol%. Compared with the pure SnO2, the presence of the dopant alters slightly the crystal cell parameter of SnO2 and increases significantly its crystal cell volume.