基于压控单元的单电子晶体管宏模型

Macro-Model of Single-Electron Transistor Based on Voltage-Controlled Unit

在对纳米遂穿结(SETJ)及单电子晶体管(SET)的特性进行分析的基础上,笔者采用等效电路的方法,提出了基于压控单元的SET宏模型,仿真得到单电子晶体管的特性曲线.通过器件仿真的输出特性曲线与理想特性曲线的对比,得出曲线的走势与理想曲线基本一致,偏差不大.并且通过计算表明,数值的精度在合理范围内,验证了模型的合理性.

Based on the analysis of characteristics in single electron tunneling junction and single-electron transistor, using the equivalent circuit method, macro-model was proposed based on the voltage-controlled unit. Simulation was executed subsequently to get characteristic curves. Comparison between curves was obtained by simulator, and ideal curves was done to indicate the same trend. Numerical calculations verify that the model is reasonable.