摘要
利用溶胶凝胶工艺在Pt/TiO2/SiO2/Si衬底上制备了Ca0.4Sr0.6SmxBi4-xTi4O15铁电薄膜。研究了不同钐掺量对薄膜的显微结构、晶粒取向及铁电性能的影响。结果表明:钐掺杂对钙锶铋钛铁电薄膜既有抑制氧空位所导致的畴钉扎作用,也有抑制晶粒生长发育的作用。当钐掺量x=0.05时薄膜样品晶粒发育较良好,沿a轴择优取向,I(200)/I(119)=0.869;样品铁电性能优良,剩余极化强度Pr=10.2μC/cm2,矫顽场强度Ec=120kV/cm。
Samarium doped calcium strontium bismuth titanium Ca0.4Sr0.6SmxBi4-xTi4O15 ferroelectric films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. The effect of Sm content on microstructure, growth orientation, ferroelectric of films were investigated. The result shows that Sm can inhibit the pining effect resulting form oxygen vacancies, hinder the grain growth and reduce the size of grain. The ferroelectric property of Ca0.4Sr0.6Bi4Ti4O15can be improved by adding proper amount of Sm dopants. The Pr reaches a maximum value of 10.2 μC/cm^2 when Ec=120 kV/cm, and the I（200）/I（119） reaches 0.869 when x=0.05. The film is preferred a-axis orientation, and the majority of grains in the film are spheroidal and the grain size is about 140 nm.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2009年第A02期256-259,共4页
Rare Metal Materials and Engineering
基金
国家自然科学基金项目(50872075)
山东省自然科学基金项目(Y2007F36)
关键词
铁电薄膜
钐掺杂
取向
ferroelectric film
Sm doping
orientation
