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SiO_2-SiC基复合材料吸波性能的研究 被引量:2

Synthesis and Microwave-Absorption Properties of SiO_2-SiC Matrix Composites
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摘要 首先利用溶胶-凝胶法制备SiO2-SiC复合粉体,采用SEM、XRD、DSC-TG等技术对复合粉体进行表征。结果表明,溶胶-凝胶法能够制备具有核-壳结构SiO2-SiC复合粉体。再将SiO2-SiC复合粉体与BaTiO3、Fe3O4以及环氧树脂以不同比例进行混合固化制得吸波材料样品,采用矢量网络分析仪测量样品的反射率。结果表明,SiO2-SiC复合粉体具有一定的吸波效果,20%含量的SiO2-SiC复合粉体样品在18GHz时反射率达–2.07dB,BaTiO3、Fe3O4的加入实现复合吸波效果,当SiO2-SiC:BaTiO3:Fe3O4=6:2:2(体积分数,下同)时,在5.75GHz时反射率达到–13.97dB,合格带宽为10.08GHz。 SiO2-SiC composite particles were prepared by using a sol-gel process. The techniques of SEM, XRD and DSC-TG were used to characterize the phase and microstructure of the as-obtained SiO2-SiC particles. The results show that a core-shell structure was constructed in the composite particles with the core of SiC and the shell of amorphous SiO2. The microwave absorbents were blended and solidified with epoxide resin, SiO2-SiC composite particles, BaTiO3 and Fe3O4 powders with various ratios. The vector network analyzer was used to measure the reflectivity of the SiO2-SiC matrix composites, the result shows that SiO2-SiC composite particles could absorb microwave, the reflectivity of the sample with 20 wt% SiO2-SiC particles is -2.07 dB at 18 GHz, adding BaTiO3 and Fe3O4 powders, the reflectivity of composite absorbents could be -13.97 dB at 5.75 GHz while eligible frequency range is 10.08 GHz.
机构地区 郑州大学
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2009年第A02期514-517,共4页 Rare Metal Materials and Engineering
关键词 吸波材料 复合吸波 SiO2-SiC 反射率 microwave-absorption materials composite absorbents SiO2-SiC particles refleetivity
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  • 1David A F. Aviation Week and Space Technology[J], 2001, 19:90.
  • 2Zhang R, Gao L, Guo J K. Applied Physics Letters[J], 2004, 85(11): 2047.
  • 3Zhou G H, Wang S W, Huang X X et al. Ceramics International[J], 2008, 34(2): 331.
  • 4Im S S, Terakawa S, Iwasa H et al. Applied Surface Science[J], 2008, 254(12): 3667.
  • 5Cheong K Y, Bahng W, Kim N K. Physics Letters A[J], 2008, 372(4): 529.
  • 6Meng A, Li Z J, Zhang J J et al. Journal of Crystal Growth[J], 2007, 308(2): 263.
  • 7Yi J, He X D, Sun Y et al. Applied Surface Science[J], 2007,253(17): 7100.
  • 8Yi J, He X D, Sun Yet al. Applied Surface Science[J], 2007, 253(9): 4361.
  • 9I Tomas A P, Jennings M R, Gammon P M et al. Microelectronic Engineering[J], 2008, 85(4): 704.
  • 10Fujisawa M, Hata T, Kitagawa H et al. Renewable Energy[J], 2008, 33(2): 309.

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