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重掺磷硅单晶生长技术研究 被引量:2

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摘要 在国产TDR-62硅单晶炉上,采用10英寸和12英寸热系统开展了重掺磷硅单晶生长研究,生长出了4英寸<111>晶向、电阻率1.0×10-3~1.8×10-3Ω·cm的重掺磷硅单晶。对重掺磷硅单晶的磷掺杂和电阻率控制技术及位错与微缺陷的产生机理进行了探讨。
出处 《天津科技》 2009年第6期6-8,共3页 Tianjin Science & Technology
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