未掺杂SI-GaAs退火行为的正电子湮没研究

A STUDY OF THE POSITRON ANNIHILATION OF THE ANNEDLING BEHAVIORS IN UNDOPED SI-GaAs

用正电子湮没技术,研究了未掺杂的SI-GaAs退火行为。结果表明,长寿命分量τ_2的变化不仅与镓空位而且和多镓空位络合物有关。本文还讨论了电子和中子辐照的影响。

Using the positron annihilation technique, the annealing behaviors in undoped SI-GaAs have been studied. The results show that the changes in the long lifetime com-ponent τ_2 are related to the both Ga-vacancy and multi-Ga-vacancy complex. The influence of electron and neutron irradiations has also been discussed in this paper.