摘要
This paper presents a 2.4 GHz power amplifier （PA） designed and implemented in 0.35μm SiGe BiCMOS technology. Instead of chip grounding through PCB vias, a metal plate with a mesa connecting ground is designed to decrease the parasitics in the PCB, improving the stability and the gain of the circuit. In addition, a low-pass network for output matching is designed to improve the linearity and power capability. At 2.4 GHz, a P1dB of 15.7 dBm has been measured, and the small signal gain is 27.6 dB with S11 〈 -7 dB and S22 〈 -15 dB.
This paper presents a 2.4 GHz power amplifier （PA） designed and implemented in 0.35μm SiGe BiCMOS technology. Instead of chip grounding through PCB vias, a metal plate with a mesa connecting ground is designed to decrease the parasitics in the PCB, improving the stability and the gain of the circuit. In addition, a low-pass network for output matching is designed to improve the linearity and power capability. At 2.4 GHz, a P1dB of 15.7 dBm has been measured, and the small signal gain is 27.6 dB with S11 〈 -7 dB and S22 〈 -15 dB.
