摘要
本文以CWCO_2激光为热源对不同剂量硼离子注入硅进行快速热退火。某些条件下在退火样品中会引进各种缺陷。本文讨论了注入剂量,激光功率及衬底温度对硅表面形貌的影响。
Boron ion-implanted silicon at different doses is rapidly thermally annealed using CW CO_2laser. Several damages and defects are induced in the surface of annealing samples under certain conditions. The effect of the implantation dose, the laser power and substrate temperature on the feature of silicon surface are discussed.
出处
《南京大学学报（自然科学版）》
CAS
CSCD
1990年第2期204-210,共7页
Journal of Nanjing University（Natural Science）
关键词
硅
离子注入
退火
激光
CO2
缺陷
silicon
ion-implantation
CO_2laser
annealing
defect
