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Design of Uncooled Thermal Imaging Systems Operating at Multiple Temperatures

Design of Uncooled Thermal Imaging Systems Operating at Multiple Temperatures
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摘要 The reasons why thermal imaging systems consume power are analyzed,and a low power consumption design scheme is presented for the thermal imaging systems operating at multiple temperatures. The relation between the response performance of α-Si microbolometer detector and its operating temperature is studied by means of formulas of microbolometer detector's noise equivalent temperature difference(NETD) and detectivity. Numerical analysis based on true parameters demonstrates that the detectivity decreases slightly and NETD increases slightly when operating temperature rises,which indicates that α-Si microbolometer detector has approximately uniform response in a wide operating temperature range. According to these analyses,a thermal imaging system operating at multiple temperatures is designed. The power of thermoelectric stabilizer(TEC) is less than 350 mW and NETD is less than 120 mK in the ambient temperature range of-40 ℃-60 ℃,which shows that this system not only outputs high-quality images but consumes low power. The reasons why thermal imaging systems consume power are analyzed, and a low power consumption design scheme is presented for the thermal imaging systems operating at multiple temperatures. The relation between the response performance of α-Si microbolometer detector and its operating temperature is studied by means of formulas of mierobolometer detector's noise equivalent temperature difference (NETD) and detectivity. Numerical analysis based on true parameters demonstrates that the detectivity decreases slightly and NETD increases slightly when operating temperature rises, which indicates that α-Si microbolometer detector has approximately uniform response in a wide operating temperature range. According to these analyses, a thermal imaging system operating at multiple temperatures is designed. The power of thermoelectric stabilizer (TEC) is less than 350 mW and NETD is less than 120 mK in the ambient temperature range of - 40℃- 60℃, which shows that this system not only outputs high-quality images but consumes low power.
出处 《Defence Technology(防务技术)》 SCIE EI CAS 2009年第4期296-301,共6页 Defence Technology
关键词 infared technology thermal imaging system temperature characteristics NETD DETECTIVITY infared technology thermal imaging system temperature characteristics NETD deteetivity
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参考文献9

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