单晶硅生长原理及工艺

Growth Principle and Technique of Single Crystal Silicon

介绍了直拉法生长单晶硅的基本原理及工艺条件。通过控制不同的工艺参数(晶体转速:2.5、10、20rpm;坩埚转速:1.25、5、10),成功生长出了三根150×1000mm优质单晶硅棒。分别对这三种单晶硅样品进行了电阻率、氧含量、碳含量、少子寿命测试,结果表明,当晶体转速为10rpm,坩埚转速为5rpm,所生长出的单晶硅质量最佳。最后分析了氧杂质和碳杂质的引入机制及减少杂质的措施。

This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.Through controlling different process parameters（crystal rotation speed：2.5,10,20rpm;crucible rotation speed：-1.25,-5,-10）,three high quality single crystal silicon rods with the size of 150×1000mm were grown successfully.Performance measurements of three single crystal silicon samples were performed including resistivity,oxygen and carbon con-tent,minority carrier lifetime,respectively.The results show that as-grown single crystal silicon has the optimal quality when crystal rotation speed is 10rpm, and crucible rotation speed is -5rpm. Finally, the introducing mechanism of oxygen and carbon impurities, and the way to reduce the impurities were discussed.