ZnO纳米线阵列膜的自组装生长及其金属接触特性

SELF-ASSEMBLY GROWTH OF ALIGNED ZINC OXIDE NANOWIRE ARRAYS AND ITS METAL-CONTACT PROPERTIES

以磁控溅射制备的ZnO纳米晶薄膜作为籽晶层,用水热法在80℃氧化铟锡(indium tin oxide,ITO)玻璃衬底上,实现了大面积ZnO纳米线阵列膜的取向生长,制备了3种金属-半导体-金属(metal-semiconductor-metal,MSM)结构的ZnO半导体纳米线阵列膜样品,测试了薄膜样品的光学特性和I-V特性。结果表明:在相同的生长液浓度下,籽晶层对所生长的纳米线尺度分布有显著影响。所制备的纳米线薄膜在室温下具有显著的紫外带边发射特性。ZnO纳米线/Ag和ZnO纳米线/Al的金属-半导体接触均具有明显的Schottky接触特性,而ZnO纳米线/Au的金属-半导体接触具有明显Ohmic接触特性。

The zinc oxide （ZnO） nanocrystal seeds layer was firstly deposited on an indium tin oxide （ITO） glass substrate by magnetron sputtering,and then the aligned ZnO nanowire arrays was synthesized at 80℃ through a hot solution method.The gold （Au）,silver （Ag） and aluminum （Al） metal films were deposited on the surface of the fabricated ZnO nanowire films,respectively,to fabricate three metal-semiconductor-metal （MSM） structures.The I-V characteristics for the three MSM junctions were investigated.The results show that the ZnO nanocrystal seeding layer is essential for the self-assembly growth of the ZnO nanowire arrays.The strong ultraviolet band emission peak of the nanowire arrays is observed in the measured photoluminescence spectra at room-temperature.The characteristics of the Au-ZnO nanowires MSM junction subject to the Ohmic contact property and the Ag-and Al-ZnO nanowires ones are similar to the Schottky-barrier contact function.