期刊文献+

First-principles study of La and Sb-doping effects on electronic structure and optical properties of SrTiO_3

First-principles study of La and Sb-doping effects on electronic structure and optical properties of SrTiO_3
下载PDF
导出
摘要 The effects of La and Sb doping on the electronic structure and optical properties of SrTiO3 are investigated by first-principles calculation of the plane wave ultra-soft pseudo-potential based on density functional theory. The calculated results reveal that corner-shared TiO6 octahedra dominate the main electronic properties of SrTiO3, and its structural stability can be improved by La doping. The La^3+ ion fnlly acts as an electron donor in Sr0.875La0.125TiO3 and the Fermi level shifts into the conduction bands (CBs) after La doping. As for SrSb0.125Ti0.87503, there is a distortion near the bottom of the CBs for SrSb0.125Ti0.87503 after Sb doping and an incipient localization of some of the doped electrons trapped in the Ti site, making it impossible to describe the evolution of the density of states (DOS) within the rigid band model. At the same time, the DOSs of the two electron-doped systems shift towards low energies and the optical band gaps are broadened by about 0.4 and 0.6 eV for Sr0.875La0.125TiO3 and SrSb0.125Ti0.87503, respectively. Moreover, the transmittance of SrSb0.125Ti0.87503 is as high as 95% in most of the visible region, which is higher than that of Sr0.875La0.125TiO3(85%). The wide band gap, the small transition probability and the weak absorption due to the low partial density of states (PDOS) of impurity in the Fermi level result in the significant optical transparency of SrSb0.125Ti0.875O3. The effects of La and Sb doping on the electronic structure and optical properties of SrTiO3 are investigated by first-principles calculation of the plane wave ultra-soft pseudo-potential based on density functional theory. The calculated results reveal that corner-shared TiO6 octahedra dominate the main electronic properties of SrTiO3, and its structural stability can be improved by La doping. The La^3+ ion fnlly acts as an electron donor in Sr0.875La0.125TiO3 and the Fermi level shifts into the conduction bands (CBs) after La doping. As for SrSb0.125Ti0.87503, there is a distortion near the bottom of the CBs for SrSb0.125Ti0.87503 after Sb doping and an incipient localization of some of the doped electrons trapped in the Ti site, making it impossible to describe the evolution of the density of states (DOS) within the rigid band model. At the same time, the DOSs of the two electron-doped systems shift towards low energies and the optical band gaps are broadened by about 0.4 and 0.6 eV for Sr0.875La0.125TiO3 and SrSb0.125Ti0.87503, respectively. Moreover, the transmittance of SrSb0.125Ti0.87503 is as high as 95% in most of the visible region, which is higher than that of Sr0.875La0.125TiO3(85%). The wide band gap, the small transition probability and the weak absorption due to the low partial density of states (PDOS) of impurity in the Fermi level result in the significant optical transparency of SrSb0.125Ti0.875O3.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第1期433-440,共8页 中国物理B(英文版)
基金 Project supported by the Northwest University (NWU) Graduate Innovation and Creativity Funds (Grant No. 08YZZ47) the Natural Science Foundation of Shaanxi Province of China (Grant No. 2009JM8013)
关键词 density functional theory SRTIO3 DOPING electronic structure density functional theory, SrTiO3, doping, electronic structure
  • 相关文献

参考文献25

  • 1Kim H and Pique A 2004 Appl. Phys. Lett. 84 218.
  • 2Furubayashi Y, Yamada N, Hirose Y, Yamamoto Y, Otani M, Hitosugi T, Shimada T and Hasegawa T 2007 J. Appl. Phys. 101 093705.
  • 3Liu Q Z, Wang H F, Chen F and Wu W 2008 J. Appl. Phys. 103 093709.
  • 4Kwon Y, Li Y, Heo Y W, Jones M, Holloway P H, Norton D P, Park Z V and Li S 2004 Appl. Phys. Lett. 84 2685.
  • 5Siddiqui J, Cagin E, Chen D and Phillips J D 2006 Appl. Phys. Lett. 88 212903.
  • 6Wang H F, Liu Q Z, Chen F, Gao G Y, Wu W and Chen X H 2007 J. Appl. Phys. 101 106105.
  • 7Wang H H, Chen F, Dai S Y, Zhao T, Lu H B, Cui D F, Zhou Y L, Chen Z H and Yang G Z 2001 Appl. Phys. Lett. 78 1676.
  • 8Cho J H and Cho H J 2001 Appl. Phys. Lett. 79 1426.
  • 9Guo H Z, Liu L F, Fei Y Y, Xiang W F, Lu H B, Dai S Y, Zhou Y L and Chen Z H 2003 J. Appl. Phys. 94 4558.
  • 10Wang R P and Tao C J 2002 d. Cryst. Growth 245 63.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部