摘要
SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors （HEMTs）. In this paper, the effects of SiNx passivation film on both two-dimensional electron gas characteristics and current collapse of A1GaN/GaN HEMTs are investigated. The SiNx films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.
SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors （HEMTs）. In this paper, the effects of SiNx passivation film on both two-dimensional electron gas characteristics and current collapse of A1GaN/GaN HEMTs are investigated. The SiNx films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.
基金
Project supported by the National Natural Science Foundation of China (Grant Nos. 60536020 and 60723002)
the National Basic Research Program of China (Grant Nos. 2006CB302800 and 2006CB921106)
the National High Technology Research and Development Program for Advanced Materials of China (Grant No. 2006AA03A105)
the Major Project of Beijing Municipal Science and Technology Commission, China (Grant No. D0404003040321)
