摘要
由于CuInSe2(简称CIS)薄膜太阳能电池材料的吸收系数高、带隙可控、结晶品质高、弱光性能好、抗辐射能力强、电池性能稳定、制造成本低、光电转换效率达到了21.5%,其相应的薄膜制备工艺成为了太阳能电池行业主要生产方向之一。该文在特定的实验条件下,通过实验分析测试,简要介绍了CuIn金属预置层以及硒化温度对CIS薄膜制备产生的可能影响。
CulnSe2 （CIS for short）film solar cell material has many advantages, such as, high absorption coefficient, performance stabilization, low cost, good weak light property. The related film preparing process has become one of the main production directions for solar cell industry. This paper describes the probable influence of CuIn metal predeposited layer and selenylation temperature on CIS film, through the analysis and test of experiments under special experimental condition.
出处
《建材世界》
2009年第6期17-19,共3页
The World of Building Materials
关键词
CIS薄膜
硒化温度
薄膜
CIS thin film
selenylation temperature
thin film
