摘要
对电离辐照敏感的厚氧化层ｐＭＯＳ场效应管进行了Ｘ射线和低能强流电子束的瞬态辐照实验；通过对阈电压漂移的跟踪监测，研究了ｐＭＯＳ场效应管的瞬态电离辐照效应。运用辐射感生氧化物、界面缺陷模型并结合ＭＯＳ器件寄生二极管等效电路模型解释了实验结果。
The pMOS FETs with thick oxide layer were irradiated with transient X-rays or intensive pulsed low energy electron beam, and the radiation effects were investigated by continuous measurement of the threshold voltage. The experimental . results were interpreted by means of the irradiation-induced oxide traps and interface traps in MOS structure, and the equivalent diode circuits of pMOS FETs under transient irradiation.
出处
《核技术》
EI
CAS
CSCD
北大核心
1998年第9期534-538,共5页
Nuclear Techniques
