摘要
采用低压金属有机化学气相沉积法在蓝宝石(0001)衬底上生长2～5μm厚度的P-Al_xGa_(1-x)N/GaN层(0<x≤0.4),在Al_xGa_(1-x)N层中的Al浓度为0.2<x<0.7。优化了影响P型GaN性质的生长参数:Mg流量、生长温度和Ⅴ/Ⅲ比。过量的Mg源流量、过高的生长温度、过大的Ⅴ/Ⅲ比都会降低自由空穴浓度;研究了退火温度对P型GaN空穴浓度和光致发光的影响,获得了最佳退火温度为680～750℃的范围。
Two to five micrometer thick P-AlxGa1-xN/GaN layers with 0〈x≤0.4 were grown by low-pressure metal organic chemical Vapour deposition on sapphire （0001）substrates. For Al concentrations 0.2〈x〈0.7 in the AlxGa1-xN layers,the orthogonal-design method is employed to optimize the growth parameters of p-typed GuN ,such as the Mg flux,growth temperature,and Ⅴ/Ⅲ ratio. It is found that the hole concentration is reduced by excessively high Mg flux,high growth temperature,and great Ⅴ/Ⅲ ratio.The influence of the annealing temperature on the hole concentration and photoluminescence of p-typed GaN is also studied.The optimum annealing temperature is between 680 ℃ and 750 ℃.
出处
《真空与低温》
2009年第4期233-237,共5页
Vacuum and Cryogenics
基金
自主资助项目(556000839)
关键词
GAN材料
掺杂浓度
光致发光
退火温度
GaN material
doping concentrations
photoluminescence
annealing
