一种0.9V低电压低本振功率CMOS有源混频器

A 0.9V Low Voltage Low LO Power CMOS Active Mixer

设计了一种可工作于0.9 V低电压和-5 dBm本振功率的CMOS有源混频器。通过在MOS管栅极和衬底间引入耦合电容,利用衬底效应加快MOS管的导通和截止,使开关对的开关状态更理想,有效地降低混频器的噪声并提高其线性特性。采用0.18μmCMOS工艺设计,在2.45 GHz本振信号和2.44 GHz射频信号输入下,实验结果表明该混频器可有效地实现混频且具有较好的性能指标:电压转换增益为12.4 dB,输入三阶截断点为-0.6 dBm,输入1dB压缩点为-3.4 dBm,单边带噪声系数为12dB。

A CMOS active mixer which can operate at 0.9V low supply voltages and -5dBm low local oscillator（LO） power is proposed. A capacitor is introduced between the gate and body of each MOSFET, so the body effect improves the pinch - on and off speed of the MOSFET makes the switching pairs switch quickly, thus improving the noise and linearity performance of the mixer. The 0.18μm CMOS technology is adopted in the design,with 2.45GHz LO input and 2.44GHz RF input. Experiment results show that the proposed mixer can achieve mixing effectively and has good specification ：the voltage conversion gain is 12.4dB and the input- referred third- order intercept point is -0.6dBm, the input- referred l dB compression point is -3.4dBm,the single side- band noise figure is 12dB.