阵列式半导体湿敏元件机理研究

The Investigation of Mechanism for Array Semiconductor Humidity Sensor

为了从理论上解决阵列式半导体湿敏元件阻值随湿度的变化关系,本文引进了两种水分子与阵列作用的机制.其一,水分子与多晶硅表面及晶界的作用;其二,水分子与阵列结构的碰撞作用,进而计算了湿敏元件阻值随湿度的变化关系:R=R_0(1-Az%)/(1+Dx%)理论计算的结果与实验比较,其结果符合得很好.

With a view to explaining the relation of change of resistance of array semicondutor humidity sensor with moisture in theory,two mechanisms of effect between the molecules of water and arry have been in- troduced.The first is the effect of molecules of water with the surface and boundary of polycrystalline sili- con,and the second is the effect of collision of water molecules with array structure.The relation of change between the resistance of humidity sensor and moisture in theory have been calculated, R=R_o(1—Ax%)(1+Dx%) The result of theoretical calculation is identical with that of experiment.