摘要
量子点红外光电探测器(QDIP)凭借自身的优点,未来很有可能与碲镉汞(HgCdTe)红外探测器、量子阱红外光电探测器(QWIP)和非制冷微测辐射热计相竞争。目前,普遍采用自组织方法生长量子点,研究主要集中在:①隧道量子点红外探测器(T-QDIP);②量子阱中量子点(DWELL)红外探测器;③Si基QDIP;④Ge QDIP。本文阐述正在研究的几种QDIP,并对下一代传感器用QDIP进行预测。
Quantumdot infrared photodetector (QDIP) will probably compete with HgCdTe, QWIP and uncooled mierobolometer in the future because of itsself merits. Currently, QDs are grown by self-organized method. The study is focused on ①tunneling QDIP(T-QDIP) ;②quantum dots-in-a-well(DWELL) IP;③Si-based QDIP; ④Ge QDIP. Several kinds of QDIP being developed are introduced and the QDIP used for the next-generation sensors are forecasted in this paper.
出处
《激光与红外》
CAS
CSCD
北大核心
2010年第1期3-8,共6页
Laser & Infrared