摘要
采用直流磁控反应溅射法,分别在室温,200,300,400和500℃下制备了HfO2薄膜。利用X射线衍射(XRD)、椭圆偏振光谱(SE)和紫外可见光谱(UVvis)研究了衬底温度对HfO2薄膜的晶体结构和光学性能的影响。XRD研究结果显示:不同衬底温度下制备的HfO2薄膜均为单斜多晶结构;随衬底温度的升高,(-111)面择优生长更加明显,薄膜中晶粒尺寸增大。SE和UVvis研究结果表明:随衬底温度升高,薄膜折射率增加,光学带隙变小;制备的HfO2薄膜在250~850nm范围内有良好的透过性能,透过率在80%以上。
HfO2 films were deposited by direct current reactive magnetron sputtering on n-type Si(100) substrates and fused silica substrates, respectively. The substrate temperature ranges from room temperature to 500 ℃. The influence of substrate temperature on structure and optical properties of the films was investigated by X-ray diffraction(XRD), spectroscopic ellipsometry(SE) and ultraviolet visible spectroscopy(UV-vis). XRD results show that all deposited films are polycrystalline with monoclinic structure. As the substrate temperature increases, the preferred orientation of (-111) becomes more obvious, and the grain size of HfO2 films increases. SE and UV-vis results demonstrate that, with the substrate temperature increasing, the refractive index increases and the optical band gap decreases. An excellent transmittance, exceeding 80% in the range from 250 nm to 850 nm, is obtained for all samples.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2010年第1期71-74,共4页
High Power Laser and Particle Beams
基金
国家自然科学基金委员会与中国工程物理研究院联合基金项目(10776010)
表面工程技术国家级重点实验室基金项目(9140C5401010801)
关键词
HfO薄膜
衬底温度
晶体结构
直流磁控反应溅射
折射率
光学带隙
HfO2 thin films
substrate temperature
crystal structure
direct current reactive magnetron sputtering
refractive index
optical band gap