纳米Ag夹层ZnO薄膜的光电性能

Electrical and Optical Properties of ZnO Films with Ag Nanoscale Interlayer

用射频磁控溅射ZnO陶瓷靶、直流磁控溅射Ag靶的方法在室温下制备了Ag纳米夹层结构ZnO薄膜.用X射线衍射仪、紫外-可见分光光度计、四探针电阻测量仪和原子力显微镜对薄膜样品的结构、光学透过率、面电阻和表面形貌进行表征.结果表明,ZnO衬底有利于Ag夹层形成连续膜.随着Ag层厚度的增加,Ag夹层ZnO薄膜呈现多晶结构,Ag(111)衍射峰强度增强,面电阻先迅速下降后缓慢下降.随着ZnO膜厚度的增加,Ag夹层ZnO薄膜的透射峰红移.制得样品的最佳可见光透过率高达92.3%,面电阻小于4.2Ω/□.

ZnO films with Ag nanoscale interlayer were prepared on glass substrates with alternate RF magnetron sputtering of ZnO and DC magnetron sputtering of Ag at room temperature. The structure, optical transmittance, sheet resistance and surface morphology of the films were studied using X-ray diffraction, UV-VIS spectrometer, four-point probe and atomic force microscopy. Results indicates that ZnO substrates are helpful in forming continuous Ag films. With the increase of Ag interlayer thickness, ZnO films with Ag inter/ayer display good polycrystallinity, the intensity of Ag（ 111 ） peak increases, and the sheet resistance of ZnO films with Ag interlayer first rapidly decreases and then slowly decreases. The peak transmittance of ZnO films with Ag interlayer shifts toward the long wavelength region with the increase of ZnO film thickness. ZnO films with Ag interlayer prepared have sheet resistance lower than 4. 2 1）/□ and optimal transmittance as high as 92.3%.