4，4′-双(4″，4″，4″-三氟代-1″,3″-二氧代丁基)间位联苯基苯双核铕配合物的合成与发光

Synthesis and Luminescence of Dinuclear Eu (Ⅲ) Complex Based on 4,4'-bis (4″,4″,4″-trifluoro-1″,3″-dioxobutyl)-m-diphenylbene

合成了一个新的双核铕配合物Eu2(bdb)3·4H2O[H2bdb=4,4′-双(4″,4″,4″-三氟代-1″,3″-二氧代丁基)-间位联苯基苯]。元素分析、红外光谱、质谱证实其配位方式是三个配体同时和两个铕离子绞合配位。该配合物发出铕离子特征红光,发射峰值位于614nm,其激发光谱的激发峰值位于370nm。配合物的发光寿命为336μs,寿命曲线很好地和单指数衰减拟合曲线相吻合,进一步证实配合物只有一个对称中心铕离子存在。配合物热稳定性达到230℃,满足制备LED器件的要求。将该配合物与370nm发射的InGaN芯片组合成功地制备了红色发光二极管,当配合物和硅树脂的质量比为1:30时,红色发光二极管的色坐标为x=0.6353,y=0.3340,发光效率为1.36lm/W。结果表明:该配合物是制备半导体高显色指数白光LED潜在的红色有机发光材料。

A new complex Eu2 （ bdb ） 3·4H2O [ H2bdb =4,4′-（4″,4″,4″-trifluoro-1″,3″-dioxobutyl） -m- diphenylbene ] was designed and synthesized. Its structure was characterized by elemental analysis, IR spectrum, FAB-Ms, the results shown that the complex has stranded dinuclear europimum （ Ⅲ ） structure with tri- ple ligands. The complex emits bright red luminescence, correspending to 5 D0→ 7 FJ （ J = 0 - 4） transitions of Eu3＋ with the maximum peak at 614 nm under near UV irradiation. Monitored at 614nm, the strongest excita- tion wavelength is located at 370 nm, which well matched to the emission light of 370 nm InGaN chip. The fluorescence lifetime of the complex is 336μS, the decay curve can be fit with a single exponential model, which is consistent with only one symmetric site for the Eu （ III ） ion in the complex molecule. The thermo- gravimetrie analysis curve for the complex shows the decomposition temperature of the complex is up to 230℃ and meets the requirement of fabrication of LED device. A red conversion light-emitting diode （LED） device was fabricated by coating complex onto 370 nm InGaN-based-LED chip. When the mass ratio of the europium complex to the silicone is 1： 30, the CIE chromaticity coordinates of LED emission are x = 0. 635 3, y = 0. 334 0, the luminescence efficiency of device is 1.36 lm/W. The results indicate that complex Eu2（ bdb）3·4H2O can act as red component in the fabrication of white LED.