摘要
在二维空穴掺杂t-t′-J-U模型和重整化平均场理论的框架下,用Gutzwiller平均场近似方法研究了电子次近邻跃迁(t′)对空穴掺杂超导体的反铁磁序的影响。在掺杂浓度δ小于0.1的欠掺杂区存在反铁磁序,t′的引入使反铁磁序能在更大的掺杂浓度区存在,而且随着次近邻跃迁的增大,反铁磁序明显增强。
The effects of the next-nearest-neighbor (t')hopping on antiferromagnetism were investigated in based on the Gutzwiller mean-field approximation method approach in the two dimensions hole-doped t--t′-J-U model and the renormalized mean field theory. The antiferromagnetism order emerges in the under doped region below the doping levels δ〈0.1 and the antiferromagnetism extends in the larger doping levels region with the injection of t′. The antiferromagnetism orders are greatly enhanced with the increasing of the next-nearest-neighbor hopping.
出处
《新技术新工艺》
2010年第1期87-89,共3页
New Technology & New Process
关键词
d-波超导体
电子次近邻跃迁
反铁磁序
d-wave superconductivity, Next-nearest-neighbor hopping, Antiferromagnetism