硫化温度和时间对Sn_xS_y薄膜结构和成分的影响

Influence of Sulphurization Temperature and Time on Structure and Composition of Sn_xS_y Thin Films

用热蒸发技术在玻璃基片上沉积一层sn薄膜，在真空条件下，将其在150～300℃下硫化30．60min．对在不同温度和时间下硫化的薄膜进行结构、成分和表面形貌分析，结果表明：在不同温度和不同时间下硫化，所得到的薄膜在物相结构、成分和表面形貌上都存在差异．当硫化温度为240℃、硫化时间为45min时，所制得的薄膜为正交结构的SnS多晶薄膜，其均匀性、致密性以及对基片的附着力都较好，具有（111）方向优先生长，薄膜粒径在200～800nm，且晶格常数与标样的数值吻合很好．

SnxSy thin films had been prepared hy a two-step process. This process included the deposi- tion of Sn thin films on glass substrates by thermal evaporation and sulphurization of Sn thin films for 30 - 60 rain in a vacuum condition at different temperatures of 150 - 300 ℃. Their microstructures, composition and morphology at different sulphurization temperatures and time were analyzed. The results showed： there were some differences in phase structure, composition and morphology for the films synthesized at different sulphurization temperatures and time ; the films sulphurized at a temperature of 240 ℃ for 45 min were poly- crystalline SnS films with orthorhombic structure. The SnS films had a strong （ 111 ） preferred orientation and good adhesion to the substrates. They were uniform and their grain size was about 200 -800 nm. The lattice constant of the films was in good agreement with that of the standard sample.