AlN陶瓷基板在空气中的热氧化行为探讨

SURVEY ON INITIAL OXIDATION BEHAVIOR OF AlN CERAMIC SUBSTRATE IN AIR

利用二次离子质谱（ＳＩＭＳ）并结合Ｘ射线衍射分析（ＸＲＤ）研究了ＡｌＮ陶瓷基板在８５０—１１００℃空气中退火时的初始氧化行为．结果表明，未退火ＡｌＮ陶瓷基板表面区存在很薄的富氧层．在退火１０ｍｉｎ的条件下，随着退火温度的增加，富氧层迅速增厚．在１１００℃退火２０ｍｉｎ的条件下，ＡｌＮ陶瓷基板表面区有连续的氧化层生成．最后，结合化学热力学，探讨了ＡｌＮ陶瓷基板表面的初始氧化机理．

Secondary ion mass spectrometry (EIMS) and X -ray diffraction (XRD) measurement were employed to study the initial oxidation behavior of AlN ceramic substrate in air at 850—1 100 ℃. The results show that there is already a very thin oxygen_rich layer in the surface region of unannealed AlN ceramic substrate. When the sample is annealed for 10 minutes, the oxygen_rich layer becomes thicker rapidly with the increasing of annealing temperature. When it is annealed at 1 100 ℃ for 20 minutes, a continuous oxidic layer is formed. In the end, combined with chemical thermodynamics, the initial oxidation mechanism near the surface of AlN substrate is discussed.