原位弯曲阴极法测量不同基体上电沉积铜膜和镍膜的内应力

Determination of internal stress in Cu and Ni films on different substrates by in-situ bent-cathode method

利用直流电沉积法,在碳素钢和铜基体上沉积Ni膜,以及在碳素钢基体上沉积Cu膜。用自行设计的原位弯曲阴极测量装置,测量了不同基体上不同薄膜的内应力。实验表明,原位弯曲阴极法比普通悬臂梁法更精确、简便。薄膜材料的内应力与基体材料有关。碳素钢基体和纯铜基体上沉积的Ni膜内应力随膜厚呈相反的变化趋势。碳素钢基体上电沉积Cu膜的内应力随膜厚的增加而降低;而碳素钢基体上电沉积Ni膜的内应力随膜厚的增加而增大,但当膜厚增大到一定程度时,内应力变化平缓。

Ni films were deposited on carbon steel and copper substrates and Cu films were prepared on carbon steel substrates by using direct-current electrodeposition method. The internal stress in the films was measured by using a self-designed in-situ bent-cathode measuring instrument. The results showed that the in-situ bent-cathode method is more accurate and simple than that The internal stress is related of general cantilever method. to the matrix materials. The internal stress in Ni films on carbon steel shows the opposite trend to that on copper substrates. The internal stress in Cu films on carbon steel is decreased with increasing thickness while that in Ni films on carbon steel is increased with increasing thickness; however, it doesn＇t change significantly when the film thickness increases to a certain extent.