摘要
以Au膜作为金属催化剂,直接从n-(111)Si单晶衬底上制备了直径为30—60nm和长度从几微米到几十微米的高质量Si纳米线.实验研究了Au膜层厚、退火温度、N2气流量和生长时间对Si纳米线形成的影响.结果表明,通过合理选择和优化组合上述各种工艺条件,可以实现直径、长度、形状和取向可控的纳米线生长.基于固-液-固生长机理,定性阐述了Si纳米线的形成过程.
High quality silicon nanowires (SiNWs) were grown directly from n-(111) silicon single crystal substrate by using Au film as a metallic catalyst. The diameter and length of the formed nanowires are 30—60 nm and from several micrometers to sereral tens of micrometers, respectively. The effects of Au film thickness, annealing temperature, growth time and N2 gas flow rate on the formation of the nanowires were experimentally investigated. The results confirmed that the silicon nanowires with controlled diameter, length, shape and orientation can be obtained via reasonably choosing and optimizing various technical conditions. The formation process of the silicon nanowires is analyzed qualitatively based on solid-liquid-solid growth mechanism.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2010年第2期1169-1174,共6页
Acta Physica Sinica
基金
河北省自然科学基金(批准号:E2008000626)
中国科学院半导体研究所半导体材料科学重点实验室基金(批准号:KLSMS05-03)资助的课题~~
关键词
SI纳米线
Au-Si液滴合金
固-液-固生长
结构表征
silicon nanowires Au-Si liquid droplet alloys solid-liquid-solid growth structural characteristics