有机薄膜晶体管驱动聚合物发光二极管研究

Integration of organic thin-film transistor and polymer light-emitting diodes

研究了有机薄膜晶体管(OTFT)与聚合物发光二极管(PLED)集成制备技术和相关物理问题.OTFT结构为栅极钽(Ta)/绝缘层五氧化二钽(Ta2O5)/有源层并五苯(Pentacene)/源漏极金(Au);PLED器件结构为ITO/PEDOT:PEO(polyethylene oxide)/P-PPV或MEH-PPV/Ba/Al.PEDOT:PEO,P-PPV和MEH-PPV薄膜层均采用丝网印刷技术,实现了OTFT与PLED器件集成发光.其中OTFT器件的阈值电压为-7V,迁移率为0.91cm2/(V.s),并通过OTFT驱动得到以P-PPV和MEH-PPV为发光层的PLED器件的发光亮度分别达到124和26cd/m2,电流效率分别为12.4和1.1cd/A.利用丝网印刷技术可以有效控制高分子薄膜的沉积区域,实现功能器件的集成.

We investigated the technology and the related physical problems for integrating organic thin-film transistor （OTFT） and polymer light-emitting diode （PLED）. The OTFT uses Pentacene as the active medium, Ta2O5 as dielectric layer, Ta as gate electrode and Au as source/drain electrodes. The structure of PLED device is ITO/PEDOT：PEO （polyethylene oxide）/P-PPV or MEH-PPV/Ba/Al. The PEDOT：PEO, P-PPV and MEH-PPV film layers were obtained by using screen printing technology. The transistors have a threshold voltage of -7.1 V and carrier mobility of 0.91 cm^2/（V·s）. The luminance of the PLEDs with P-PPV and MEH-PPV emissive layer when were driven by OTFT could reach 124 and 22 cd/m^2, and the maximal luminous efficiency are 12.4 and 1.1 cd/A, respectively.