期刊文献+

Controlling the electronic structure of SnO_2 nanowires by Mo-doping

Controlling the electronic structure of SnO_2 nanowires by Mo-doping
下载PDF
导出
摘要 Mo-doped SnO2 (MTO) nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo doping, which implies that Mo ions do enter into the lattice of SnO2 nanowire. Ultraviolet-visible diffuse reflectance spectra show that the band gap of MTO nanowires decreases with the increase of Mo concentration. The photoluminescence emission of SnO2 nanowires around 580~nm at room temperature can also be controlled accurately by Mo-doping, and it is extremely sensitive to Mo ions and will disappear when the atomic ratio reaches 0.46%. Mo-doped SnO2 (MTO) nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo doping, which implies that Mo ions do enter into the lattice of SnO2 nanowire. Ultraviolet-visible diffuse reflectance spectra show that the band gap of MTO nanowires decreases with the increase of Mo concentration. The photoluminescence emission of SnO2 nanowires around 580~nm at room temperature can also be controlled accurately by Mo-doping, and it is extremely sensitive to Mo ions and will disappear when the atomic ratio reaches 0.46%.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第2期352-356,共5页 中国物理B(英文版)
基金 supported by the Major Research Plan of National Natural Science Foundation of China (Grant No. 90606010) the Program for New Century Excellent Talents in University, China (Grant No. NCET-07-0278) the Hunan Provincial Natural Science Fund, China (Grant No. 08JJ1001) the Scientific Research Fund of Hunan Normal University, China (Grant No. 070623)
关键词 DOPING NANOSTRUCTURES chemical vapor deposition processes semiconducting materials doping nanostructures chemical vapor deposition processes semiconducting materials
  • 相关文献

参考文献24

  • 1Chopra K L, Major S and Pandya D K 1983 Thin Solid Films 102 1.
  • 2Comini E, Faglia G and Sberveglieri G 2001 Sens. Actuator B 78 73.
  • 3Chen F, Shi Z and Liu M 2000 Chem. Commun. 21 2095.
  • 4Mulla I S, Rao V J, Soni H S, Badrinarayanan S and Sinha A P B 1987 Surf. Coat. Tech. 31 77.
  • 5Chaudhary V A, Hegde S G, Srinivas D, Mulla I S and Vijayamohanan K 2001 J. Phys. Chem. B 105 2565.
  • 6Niranjan R S, Patil K R, Sainkar S R and Mulla I S 2003 Mater. Chem. Phys. 80 250.
  • 7Ramgir N S, Hwang Y K, Jhung S H, Mullal S and Chang J S 2006 Sens. Actuators B 114 275.
  • 8Pan Z W, Dai Z R and Wang Z L 2001 Science 291 1947.
  • 9Ma X L, Li Y and Zhu Y L 2003 Chem. Phys. Lett. 376 794.
  • 10Dai Z R, Gole J L, Stout J D and Wang Z L 2002 J. Phys. Chem. B 106 1274.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部