真空热蒸发制备ZnS薄膜及其特性的研究

Preparation of ZnS thin films by thermal evaporation and study of its properties

用真空热蒸发在不同衬底温度下制备了ZnS薄膜,利用X射线衍射(XRD)、X射线能谱(EDAX)、紫外可见分光光度计(UV-vis)和原子力显微镜(AFM)研究了ZnS薄膜的晶体结构、成分、光学性能和形貌,分析了衬底温度对ZnS薄膜结构与光学特性的影响。结果表明,所制备的ZnS薄膜呈立方闪锌矿结构,衬底温度为300℃所制备的ZnS薄膜原子比(S/Zn)为0.95/1;薄膜表面均匀致密,呈多晶态,晶粒尺寸为18.2nm;在可见区有好的透射性能,光学禁带宽度为3.82eV。

ZnS thin films were deposited on glass substrate by thermal evaporation at different substrate temperatures. The films were studied by X-ray diffraction （XRD）, energy dispersive X-ray analysis （EDAX）, ultraviolet-visible spectrophotometer （UV-vis） and atomic force microscopy （AFM） .The results show that all ZnS thin films have a crystalline structure of cubic phase and the atomic ratio S/Zn of the sample deposited at substrate temperature of 300 ℃ is about 0.95/1. Moreover, the surface of the film is uniform and compact and ZnS grain size is 18.2 nm. The sample has a good transmission characteristic in the visible region and the energy band gap is about 3.82 eV.