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蓝宝石基片上制备双面Tl_2Ba_2CaCu_2O_8超导薄膜 被引量:1

Fabrication and properties of double-side Tl_2Ba_2CaCu_2O_8 superconducting thin film on sapphire substrate
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摘要 在蓝宝石基片上,以CeO2为缓冲层制备了高质量的双面Tl2Ba2CaCu2O8(Tl-2212)超导薄膜。以金属铈靶作为溅射源生长了c轴取向的CeO2缓冲薄膜,并对CeO2薄膜进行了高温处理,有效改善了其结晶质量和表面形貌。采用两步法制备了双面的Tl-2212超导薄膜。XRD测试显示,薄膜为纯的Tl-2212相,且其晶格c轴垂直于衬底表面。超导薄膜的Tc为106K,Jc(77K,0T)为3.5MA/cm2,微波表面电阻Rs(77K,10GHz)为390μΩ。 High quality Tl2Ba2CaCu2O8(Tl-2212) superconducting thin films were fabricated on CeO2 buffered double-side sapphire substrates.Using the metal cerium target as the sputtering source,CeO2 buffer films with c-axis orientation were deposited by RF reactive magnetron sputtering technique,and high temperature treatment was carried out to the CeO2 films to improve the crystal quality and surface morphology.Then,two-side Tl-2212 superconducting films were fabricated on CeO2 buffered sapphire substrates using two-step technique.XRD showed that the films were pure Tl-2212 phase with c-axis perpendicular to the substrate surfaces.Tc of the Tl-2212 film was 106K,Jc(77K,0T) was 3.5MA/cm2,and Rs(77K,10GHz) was as low as 390μΩ.
出处 《低温与超导》 CAS CSCD 北大核心 2010年第1期32-36,共5页 Cryogenics and Superconductivity
基金 国家重点基础研究发展计划(973)项目(2006CB601006) 国家高技术研究发展计划863计划(2009AA03Z208)资助
关键词 Tl-2212超导薄膜 蓝宝石基片 CeO2缓冲层 Tl-2212 superconducting film Sapphire substrate CeO2 buffer layer
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