倾斜式生长ZnS纳米柱状薄膜及其透射性能的研究

Preparation and Transmissivity of ZnS Nanocolumn Thin Films with Glancing Angle Deposition Technology

采用倾斜式生长的方法,在本底真空为3×10-4Pa,生长率为0.2 nm.s-1的条件下,通过改变衬底的法线方向与入射粒子流的夹角α,在ITO导电玻璃衬底上制备了ZnS纳米薄膜。在α=80°和85°时,样品的X射线衍射谱证实了不同倾斜角时所制备薄膜中均有纳米ZnS晶体形成,扫描电子显微镜(SEM)图像显示,所形成的薄膜均呈现出了柱状结构,并且倾斜角为85°时所得到的纳米柱直径大于80°时所得结果;在α=0°时,相应测量结果表明,虽然在不同衬底上也形成了纳米ZnS晶体薄膜,但并未见柱状结构,而是形成了一层均匀且致密的薄膜。对两种薄膜结构的生长动力学过程作了分析。ITO衬底上薄膜的透射光谱表明ZnS柱状薄膜能够提高可见光的透过率,因此对柱状ZnS纳米薄膜的研究将有利于提高电致发光器件的发光效率。

Nanocrystalline ZnS thin films were fabricated by glancing angle deposition （GLAD） technology in an electron beam evaporation system. Deposition was carried out in the custom vacuum chamber at a base pressure 3× 10 4 Pa, and the deposition rate was fixed at 0. 2 nm · s 1. ZnS films were deposited on pieces of indium tin oxide （ITO） substrates when the oblique angle of the substrate relative to the incoming molecular flux was set to 0°, 80° and 85° off the substrate normal respectively. X-ray diffraction （XRD） spectra and scanning electron microscope （SEM） images showed that ZnS nanocrystaltine films were formed on the substrates at different oblique angle, but the nanocolumn structure was only formed under the situation of a^80~ and 85~. The dynamics during the deposition process of the ZnS films at a=0~, 80~ and 85~ was analyzed. The transmitted spectra of ZnS thin films deposited on 1TO substrates showed that the ZnS nanocolumn thin films could enhance the transmissivity in visible range. The ZnS nanocolumn could be used into electroluminescence device, and it would enhance the luminous efficiency of the device.