摘要
对近空间升华法制备的大面积(30 × 40 cm^2)CdTe多晶薄膜用不同方法进行退火处理,用XRD、C~V、I~V等研究了退火条件,退火方式对薄膜结构和器件性能的影响.结果表明:刚沉积的CdTe多晶薄膜呈立方相,沿着(111)方向择优取,向而退火后(111)(220)(311)等峰都有不同程度的增加.在纯氧气氛下,400℃退火还出现了新峰.随着退火温度的增加,电导激活能降低.经过连续退火装置在400℃下退火30分钟的电池,1/C^2和V成线性关系,具有较高的掺杂浓度、较理想的二极管因子和较高的转换效率.
Large CdTe thin films prepared by close--spaced--sublimation (CSS) technique were annealed. The effect of films' structure and properties by annealing was studied by XRD,C-V,I-V. The results showed that the structure of as--deposited CdTe film was cube and that (111)(220)(311) peaks increased after annealed. There appeared new peak in the sample annealed at 400℃ in oxygen. And with the temperature increasing, the activation energy decreased. The results of C-V and I-V characteristics improve that the continuous annealing fashion is suitable for manufacture. apparatus and ultrasonic spraying CdCl2 solution fashion is suitable for manufacture.
出处
《四川大学学报(自然科学版)》
CAS
CSCD
北大核心
2010年第1期146-150,共5页
Journal of Sichuan University(Natural Science Edition)
基金
863重点项目(2003AA513010)
博士点基金项目(20050610024)
四川省应用基础(2006J13-083)