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Damage characteristics of HfO_2/SiO_2 high reflector at 45° incidence in 1-on-1 and N-on-1 tests

Damage characteristics of HfO_2/SiO_2 high reflector at 45° incidence in 1-on-1 and N-on-1 tests
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摘要 P-polarization high reflectors are deposited by e-beam from hafnia and silica. 1-on-1 and N-on-1 tests at 1064-nm wavelength with P-polarization at 45° incidence are carried out on these samples. Microscope and scanning electron microscope are applied to investigate the damage morphologies in both 1-on-1 and N-on^l tests. It is found that the laser damage threshold is higher in N-on-1 tests and nodular defect is the main inducement that leads to the damage because nodular ejection with plasma scalding is the typical damage morphology. Similar damage morphology observed in the two tests indicates that the higher laser damage threshold in N-on-1 test is attributed to the mechanical stabilization process of nodular defects, owing to the gradually increased laser fluence radiation. Based on the typical morphology study, some process optimizations are given. P-polarization high reflectors are deposited by e-beam from hafnia and silica. 1-on-1 and N-on-1 tests at 1064-nm wavelength with P-polarization at 45° incidence are carried out on these samples. Microscope and scanning electron microscope are applied to investigate the damage morphologies in both 1-on-1 and N-on^l tests. It is found that the laser damage threshold is higher in N-on-1 tests and nodular defect is the main inducement that leads to the damage because nodular ejection with plasma scalding is the typical damage morphology. Similar damage morphology observed in the two tests indicates that the higher laser damage threshold in N-on-1 test is attributed to the mechanical stabilization process of nodular defects, owing to the gradually increased laser fluence radiation. Based on the typical morphology study, some process optimizations are given.
出处 《Chinese Optics Letters》 SCIE EI CAS CSCD 2010年第1期41-44,共4页 中国光学快报(英文版)
基金 supported by the National"863"Program of China under Grant No.2006AA804908
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