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低掺杂多晶硅薄膜晶体管阈值电压的修正模型 被引量：3

Modified Model of Threshold Voltage for Thin-Film Transistors with Low-Doped Polysilicon
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摘要 对低掺杂多晶硅薄膜晶体管的表面势进行分析,将表面势开始偏离亚阈值区、沟道电流迅速增加时所对应的栅压作为晶体管的阈值电压.考虑到多晶硅薄膜的陷阱态密度为单指数分布,通过对低掺杂多晶硅薄膜晶体管的表面势进行求解,推导出一个多晶硅薄膜晶体管阈值电压解析模型,并采用数值仿真方法对模型进行了验证.结果表明:新模型所得到的阈值电压与采用二次导数法提取的阈值电压相吻合. In this paper, first, the surface potential of thin-film transistors with light-doped polysilicon is analyzed. Next, the gate voltage, which corresponds to the channel current that quickly increases when the surface potential deviates from the sub-threshold region, is considered as the threshold voltage. Then, by taking into consideration the single-exponential distribution of trap state density, the surface potential of the transistor is derived, and an ana- lytical model of the threshold voltage is presented. Finally, a numerical simulation is performed to verify the model. The results indicate that the threshold voltage obtained by the proposed model perfectly matches that extracted by the second-derivative method.
作者 姚若河 欧秀平
机构地区 华南理工大学电子与信息学院
出处 《华南理工大学学报（自然科学版）》 EI CAS CSCD 北大核心 2010年第1期14-17,43,共5页 Journal of South China University of Technology(Natural Science Edition)
基金 国家自然科学基金资助项目(60776020)
关键词 多晶硅 薄膜晶体管 阈值电压 表面势 polysilicon thin-film transistor threshold voltage surface potential
分类号 TN321 [电子电信—物理电子学]
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参考文献16

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共引文献4

同被引文献27

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引证文献3

二级引证文献1

华南理工大学学报（自然科学版）
2010年 第1期

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