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磁控溅射法制备BiFeO_3/CoFe_2O_4多铁性复合薄膜及其铁电铁磁性研究 被引量：4

Preparation of multiferroic BiFeO_3/CoFe_2O_4 heterostructure films by magnetron sputering and investigation on ferroelectricity and ferromagnetism
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摘要 用磁控溅射法在Pt/TiO2/SiO2/Si衬底上成功制备了BiFeO3(BFO)/CoFe2O(4CFO)层状结构磁电复合薄膜,测试结果显示此磁电复合薄膜在室温下同时存在铁电性和铁磁性。在70V极化电压,室温条件下,剩余极化强度(2Pr)和矫顽电场强度(2Ec)分别为77μC/cm2和678kV/cm;饱和磁化强度(2Ms)和矫顽磁场强度(2Hc)分别为154emu/cm3和2.6kOe。 The heterostructure BiFeO3 （BFO）/CoFe204 （CFO） composite magnetoelectric thin films were deposited on Pt/TiO2/ SiO2/Si substrates by rf magnetron sputtering.Testing results reveald that the heterostructure films exhibit both ferroelectric and ferromagnetic behavior at room temperature. And the coercive eletric field intensity （2Ee） and remanent polarization （2Pr） are 678 kV/cm and 77uC/cm^2 under the voltage 70V at room temperature, respectively, while the saturation magnetization（2Me） and coercive magnetic field intensity（2Hc） are 154emu/cm^3 and 2.6kOe, respectively.
作者 于明泽 叶勤 邓检
机构地区 暨南大学物理系
出处 《真空》 CAS 北大核心 2010年第1期30-33,共4页 Vacuum
关键词 多铁性 铁电性 铁磁性 薄膜 muhiferroic ferroelectric ferromagnetic thin film
分类号 O441 [理学—电磁学] TB43 [一般工业技术]
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参考文献11

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同被引文献81

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  • 2迟振华,靳常青.单相磁电多铁性体研究进展[J].物理学进展,2007,27(2):225-238. 被引量：29
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  • 4LI Jiefang, WANG Junling, WUTTIG M, et al. Dra- matically enhanced polarization in (001), ( 101 ) and (111) BiFeO3 thin films due to epitiaxial-induced tran- sitions[J]. Appl Phys Lett,2004,84(2):5 261-5263.
  • 5WANG Y P. Room temperature saturated ferroelectric polarization in BiFeO3 ceramics synthesized by rapid liquid phase sintering [J]. Applied Physics Letters, 2004,84(10) : 1731-1733.
  • 6周立勋,朱俊,黄文,张鹰,李言荣,罗文博.BaTiO_3/CoFe_2O_4/BaTiO_3复合磁电薄膜生长及应力研究[J].真空科学与技术学报,2007,27(5):386-390. 被引量：6
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  • 10Ederer C, Spaldin N A. Influence o{ strain and oxygen vacancies on the magnetoelectric properties o{ multi{erroic bismuth Ierrite [J]. PhysRevB, 2005, 71(22): 2241039.

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真空
2010年 第1期

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