摘要
用PECVD法在不同织构ZnO:Al上沉积了p-μc-Si:H薄膜,研究了不同织构ZnO:Al与p-μc-Si:H薄膜的接触特性,研究结果表明:在织构后的ZnO:Al上沉积的p-μc-Si:H薄膜的晶化率均大于在未织构的ZnO:Al上沉积的p-μc-Si:H薄膜,且织构ZnO:Al与p-μc-Si:H薄膜的接触电阻也均小于未织构的,且织构时间最佳点为15s。
The p-uc-Si：H thin films were deposited on different ZnO：Al substrates by PECVD, then the contact characteristics between them were analyzed. The results showed that the crystallizability Of the thin films deposited on textured substrates is higher than on untextured ones and, on the contrany, the contact resistance on textured substrates is lower than on untextured ones. The optimum value of texturing time is 15sec.
出处
《真空》
CAS
北大核心
2010年第1期51-54,共4页
Vacuum
基金
河南教育学院理论物理重点学科资助项目
