高效率大功率连续半导体激光器

High Efficiency and High Power CW Semiconductor Lasers

从大功率半导体激光器的工作机理出发,对影响激光器电光转换效率的主要因素,如激光器的斜率效率ηd、阈值电流Ith、开启电压V0、串联电阻Rs以及工作电流I等进行了分析,进而讨论了提高电光转换效率的主要技术途径。通过对应变量子阱大光腔激光器外延材料开启特性的优化、大功率激光器芯片横向限制工艺的改进以及对大功率微通道热沉制作等技术的研究,制作了808nm连续半导体激光器阵列。在工作电流140A时,阵列工作电压为1.83V,输出功率145W,电光转换效率达到56.6%。

Based on the working mechanism of high-power semiconductor lasers, the main factors to influence the electro-optic conversion efficiency of lasers are analyzed, including the slope efficiency, threshold current, turn-on voltage, series resistance and operating current. The main way to improve the electro-optic conversion efficiency is discussed. Through optimizing the material growth process to reduced the turn-on Voltage, reforming chip process to improve the current and optical transverse confinement, and designing of the micro-channel heat sink to decrease the heat resistance, the high power 808 nm semiconductor laser was developed. The operating voltage is 1.83 V, and the output power reaches 145 W at 140 A operating current. The maximum electro-optic conversion efficiency reaches 56.6 %.