670nm发光二极管材料的MOCVD外延生长

MOCVD Growth of 670nm LED Materials

重点介绍了670nm LED材料的结构与制备方法,用MOCVD方法生长了较高压应变的670nm多量子阱。分析比较了670nm量子阱室温光荧光谱线宽度的影响因素,指出室温光荧光主要来源于带-带复合,荧光谱线宽度的减小是应变量子阱轻重空穴能级分离的结果,并不意味着量子阱界面质量的改进。同时介绍了二乙基锌(DEZn)的掺杂技术和掺杂浓度,通过优化掺杂条件和退火条件,p型AlInP材料获得了0.9×1018/cm3的空穴密度。外延材料制作成200μm×200μm尺寸的LED管芯,在20mA工作电流下亮度为22～24mcd。器件结果表明,用5个压应变量子阱的有源区并且采用DEZn掺杂可以制作出高亮度的670nm LED外延材料。

The structure and the growth technique of 670 nm LEDs were introduced. The high compress strain multiple quantum wells （MQWs） were grown by metal-organic chemical vapor deposition （MOCVD）. The full width of half maximum （FWHM） of room temperature photo- luminescence （PL） from compress strain （CS） MQWs was discussed. The narrow FWHMs from CS MQWs do not indicate the good interface quality of the QWs, but are the result of the peak split from the light hole and the heavy hole. The p-type doping of AlGaInP by DEZn was discussed, the high concentration of the hole was obtained for AlGalnP and GaP materials, which is 0.9× 10^18/cm^3 for the p-type AlInP. The 670 nm LED chips were produced with the size of 200 μm × 200 μm. The brightness was 22- 24 mcd at 20 mA forward current. The performance of the LED chips indicates that the structures with 5QWs and the DEZn doping could be used for production.