Opto-electrical characteristics of the Mg doped nonpoplar (11-20) GaN on R-plane sapphire
Opto-electrical characteristics of the Mg doped nonpoplar (11-20) GaN on R-plane sapphire
出处
《材料科学与工程(中英文版)》
2009年第10期47-50,共4页
Journal of Materials Science and Engineering
参考文献17
-
1Mukai T., Yamada M. and Nakamura S.. Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes. Jpn. J. Appl. Phys., 1999, 38: 3976.
-
2Mack M. P., Abare A. C., Hansen M., et al. Characteristics of indium-gallium-nitride multiple- quantum-well blue laser diodes grown by MOCVD. J. Cryst. Growth, 1998, 189/190: 837.
-
3Nakamura S., Senoh M., Iwasa N., et al. Room-temperature continuous-wave operation of lnGaN multiple-quantum-well structure laser diode with a life time of 27 hours. Appl. Phys. Lett., 1997, 70: 1417.
-
4Amano H., Kito M., Hiramatsu K., et al. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn. J. Appl. Phys., 1989, Part 2 28, L2112.
-
5Nakamura S., Iwasa N., Senoh M., et al. Hole compensation mechanism of P-type GaN films. Jpn. J. Appl. Phys., 1992, Part 1 31, 1258.
-
6Bemardini F., Fiorentini V. and Vanderbilt D.. Spontaneous polarization and piezoelectric constants of Ⅲ-Ⅴ nitride. Phys. Rev. B, 1997, 56: R10024.
-
7Takeuchi T., Sota S., Katsuragawa M., et al, Quantum-confined stark effect due to piezoelectric fields in GalnN strained quantum wells. Jpn. J. Appi. Phys., 1997, Part 2 36, L382.
-
8Waltereit P., t3randt O., Trampert A., et al. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature (London), 2000, 406: 865.
-
9Craven M. D., Waltereit P., Speck J. S., et al. Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells. Appl. Phys. Lett., 2004, 84: 496.
-
10Chakraborty A., Haskell B., Keller S., et al. Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on flee-standing m-plane GaN substrates. Jpn. J. Appl. Phys., 2005, Part 2 44, L173.
-
1周小伟,李培咸,许晟瑞,郝跃.Growth and electrical properties of high-quality Mg-doped p-type Al_(0.2)Ga_(0.8)N films[J].Journal of Semiconductors,2009,30(4):10-13.
-
2许正昱,秦志新,桑立雯,张延召,沈波,张国义,赵岚,张向锋,成彩晶,孙维国.Effect of Indium Ambient on Electrical Properties of Mg-Foped AlxGa1-xN[J].Chinese Physics Letters,2010,27(12):181-183.
-
3王辉,朱继红,江德生,朱建军,赵德刚,刘宗顺,张书明,杨辉.InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer[J].Chinese Physics Letters,2009,26(10):159-162.
-
4李亮,李忠辉,董逊,彭大青,张东国,许晓军,孙永强,周建军,孔月婵,姜文海,陈辰.Mg掺杂Al_(0.5)Ga_(0.5)N薄膜的发光性质研究[J].固体电子学研究与进展,2012,32(3):211-214.
-
5吕宝华,刘彦龙,黄健.镁掺杂对氧化锌晶体尺寸和红外性能的影响[J].有色金属工程,2014,4(2):20-21. 被引量:1
-
6许晟瑞,郝跃,段焕涛,张进城,张金凤,周晓伟,李志明,倪金玉.Surface morphology of [110] a-plane GaN growth by MOCVD on [1■02] r-plane sapphire[J].Journal of Semiconductors,2009,30(4):14-17.
-
7徐波,余庆选,吴气虹,廖源,王冠中,方容川.应力和掺杂对Mg:GaN薄膜光致发光光谱影响的研究[J].物理学报,2004,53(1):204-209. 被引量:14
-
8曹国华,秦大山,关敏,曹峻松,曾一平,李晋闽.Organic light emitting diodes using magnesium doped organic acceptor as electron injection layer and silver as cathode[J].Chinese Physics B,2008,17(5):1911-1915. 被引量:2
-
9HE Tao LI Hui DAI LongGui WANG XiaoLi CHEN Yao MA ZiGuang XU PeiQiang JIANG Yang WANG Lu JIA HaiQiang WANG WenXin CHEN Hong.The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD[J].Science China(Physics,Mechanics & Astronomy),2011,54(3):446-449.
-
10沈世奎,杨爱英,左林,崔建民,孙雨南.Temperature-dependent second harmonic generation process based on an MgO-doped periodically poled lithium niobate waveguide[J].Chinese Physics B,2011,20(10):258-261.