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氧化SiGe/Si多量子阱制备Si基SiGe弛豫衬底 被引量：1

Preparation of SiGe Buffer Layer by Oxidation of SiGe/Si MQW Structure
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摘要 SiGe弛豫衬底是制备高性能Si基SiGe光电子器件的基础平台。本文通过1050℃不同时间氧化SiGe/SiMQW材料,分析氧化过程中Ge组分、弛豫度的变化趋势,制备位错密度低、表面平整、弛豫度超过60%的Si基Si0.75Ge0.25缓冲层。 Si-based optoelectronic devices with high performance were almost based on the relaxed SiGe buffer layers. In this paper, an over 60% strain relaxed,Si0.75Ge0.25 layer formed by drily oxidizing the Si0.9Ge0.1/Si MQW on Si-sub at 1050℃ was prepared. By the comparison of the samples for various oxidation times, the relaxation ＆ composition of the SiGe layers during the oxidation processes were analyzed.
作者 方春玉 蔡坤煌
机构地区 福建农林大学金山学院办公室 厦门市三安光电科技有限公司
出处 《光谱实验室》 CAS CSCD 北大核心 2009年第6期1516-1518,共3页 Chinese Journal of Spectroscopy Laboratory
关键词 氧化 锗硅弛豫缓冲层 组分 弛豫度 Oxidation SiGe Buffer Layer Composition Relaxation
分类号 TN304.1 [电子电信—物理电子学] O657.37 [理学—分析化学]
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参考文献6

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  • 2蔡坤煌,张永,李成,赖虹凯,陈松岩.干法氧化制备SiGe弛豫缓冲层及其表征[J].Journal of Semiconductors,2007,28(12):1937-1940. 被引量：2
  • 3Cai K,Li C,Zhang Yet al, Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer[J]. Applied Surface, Science, 2008,254(17) ; 5363-5366.
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二级参考文献12

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光谱实验室
2009年 第6期

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