电子器件的第二次变革

Second Revolution of Electronic Devices

本文分析了电子器件发展的两次变革，比较了真空电子器件、微电子器件和纳电子器件的结构与特性，给出了它们在理论、材料和技术上的主要差别。提出了纳电子器件的基础结构是纳米点双隧道结构成的单电子管（ＳＥＴ），纳米功能单元的超高密度集成是纳电子器件的主要特征。

Abstract Two revolutions of electronic devices have been analyzed. Structures and properties of vacuum devices, microelectronic devices and nanoelectronic devices have been compared, and the main difference of theories, materials and techniques among them have been given. We have proposed that a single electron transistor(SET) composed of a quantum dot with both junctions is a basic structure and ultrahigh density integration is a main characteristic for nanoelectronic devices.