热丝化学气相生长金刚石温度场流场模拟计算和反应器设计原理研究

Temperature and Flow Field Simulation of HFCVD Diamond Growth and Fundamentes of Reactor Designing

在对于现有金刚石气相生长工艺特点综合分析的基础上，通过对于热丝化学气相生长金刚石工艺过程状态参数的空间场模拟及相应的实验研究，揭示了热阻塞、热绕流等背离反应基本条件的现象，以及状态参数高度不均匀性的场分布，导致偏离金刚石生长所需合理条件。这些正是当前热丝化学气相生长金刚石速率低、成本高、质量不稳定的重要原因。空间模拟及生长实验结果证明，通过选择合理的反应器结构和反应条件，可以控制反应状态参数空间场，使其符合气相生长金刚石要求，达到在保证质量稳定南时，实现大面积高速生长。这些结果为大面积高速度高质量气相生长金刚石明确了新的发展前景和具体实现途径。

Abstract Thermal blockage, thermal round flow and unevenness of state parameter fields during hot filament chemical vapor diamond growth have been revealed through simulation calculation and experimental research of processing. The above mentioned phenomena lead to deviation from rational conditions resulting in low growth rate, high production cost and unstability of product quality. It has been shown that the state parameter field can be controlled and large area, high speed, high quality diamond growth can be realized by optimizing reactor construction and reaction conditions.