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Bi_4Ti_3O_(12)对0.1BiYbO_3-0.9PbTiO_3压电陶瓷结构和性能的影响

Effect of Bi_4Ti_3O_(12) on Microstructure and Piezoelectric Properties of 0.1BiYbO_3-0.9PbTiO_3 Ceramics
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摘要 以片状Bi_4Ti_3O_(12)粉体为原材料制备了0.1BiYbO_3-0.9PbTiO_3(BYPT)高居里温度压电陶瓷,研究了Bi_4Ti_3O_(12)粉体用量对BYPT陶瓷显微组织结构和压电性能的影响。结果表明,BYPT陶瓷的最佳烧结温度为1 140℃,陶瓷由多相组成。BYPT陶瓷的居里温度均大于520℃,且随着Bi_4Ti_3O_(12)用量的增加,材料由正常铁电体向弛豫铁电体转变,陶瓷的居里温度、压电常数及介电常数先升高后降低,介电损耗则随之而减小,BYPT_2陶瓷的居里温度和压电常数最高。 In this paper, piezoelectric ceramics 0. lBiYbO3-0.9PbTiO3 (BYPT) with high Curie temperature were prepared by using Bi4 Ti3 O12 (BIT) as raw material. The effect of BIT content on the microstructure and electrical properties of BYPT ceramics was investigated. The results showed that the optimized sintering temperature was 1 140 ℃. There were many phases coexisting in the BYPT ceramics with Curie temperatwre higher than 520 ℃. The Curie temperature Tc, the piezoelectric coefficient d33 and the dielectric constant ε increased firstly and then decreased with increasing BIT content. The BYPT2 ceramic had the highest Curie temperature and piezoelectric constant.
出处 《压电与声光》 CSCD 北大核心 2010年第1期86-89,共4页 Piezoelectrics & Acoustooptics
基金 航空科学基金资助项目(2009ZF53061) 西安应用材料创新基金资助项目(XA-AM-200808) 西北工业大学科技创新基金资助项目(2006CR11)
关键词 压电陶瓷 居里温度 显微组织结构 介电性能 piezoelectric ceramics Curie temperature microstructure dielectric properties
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参考文献11

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