GaP:N　LPE半导体材料位错密度和位错坑形态分析

THE MORPHOLOGY OF DISLOCATION PIT OF GaP:N LPE SEMICONDUCTOR

利用扫描电子显微镜研究GaP：NLPE材料中位错密度和发光的关系及位错坑形态，结果发现：样品经外延后，外延层的位错密度比衬底的位错密度有不同程度的下降，因样品各异，下降幅度为37％～83％；外延层的位错密度越低，样品的发光越好．位错坑的形态有正六棱锥形、不等边六棱锥形和正三棱锥形3种形状，随着腐蚀过程进行，正六棱锥形坑渐渐演变为正三棱锥形坑．

The dislocation density and the morphology of dislocation pit of GaP:N LPE semiconductor is studied by SEM. The dislocation density has droped by 37%-83% after LPE growth. The more the dislocation density drops, the better the luminance. There are three shapes about the morphology of dislocation pit. The dislocation pit is evolved from regular hexagon to equilateral triangle in chendcal corrodent.