在Si(111)上外延生长硅化钴薄膜的SEM和XPS研究

SEM AND XPS STUDIES ON EPITAXIAL GROWTH OF CoSi_2 FILM ON Si(111)

利用质量分离低能离子束外延法，在Si（111）上生长出了硅化钻薄膜．表面微结构及表面组分、化学价态的分析测试表明，此生长工艺已获得了无针孔的高品质单晶硅化钴薄膜．通过反应外延后做后退火和不做后退火样品的对比测试的结果，对这一薄膜生长的机理进行了探讨分析．

Cobalt disilicide Films are grown on silicon (111) by mass analyzed low energy ion beam epitaxy. XPS and SEM measurements show that single optal cobalt disilicide (CoSi2) filn without needle-hole could be obtained. On the basis of comparision of the results between the post-annealed and non-annealed samples, the growth mechanism of cobalt disilicide film is discussed.