摘要
简述了金属化学机械抛光的机理。将半导体制造工艺中的化学机械抛光技术拓展并应用到W-Mo合金表面加工中,在实现W-Mo合金材料表面高平坦度、低粗糙度的前提下,提高W-Mo合金去除速率。针对W-Mo合金的性质,选用碱性抛光液,并采用田口方法对抛光液pH值、抛光压力和抛光盘转速三个重要因素进行了优化设计,得到以去除速率为评价条件的综合最优抛光参数。实验分析表明,当抛光液pH值为11,抛光压力为80 kPa,抛光盘转速60 r/min时,可以获得较高的去除速率。
The mechanism of metal chemical mechanical polishing （CMP） technology was discussed. The CMP technology in the semiconductor manufacturing process were expanded and applied to the surface processing of tungsten molybdenum alloys. The removal rate of tungsten molybdenum alloys was improved under the prerequisite of achieving the high flatness, low roughness requirements of tungsten molybdenum alloys material process. The alkali chemical polishing was used according to the properties of tungsten molybdenum alloys, optimized design of slurry pH, polishing pressure and plate rotation speed were carried out by Tagucbi method, and the comprehensive optimized polishing parameter used in evaluating the removal rate were obtained. The experiment analysis results show that when the slurry pH is 11, the polishing pressure is 80 kPa and the plate rotation speed is 60 r/min, higher removal rate can be obtained.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第2期146-149,共4页
Semiconductor Technology
基金
国家自然科学基金资助项目(10676008)
河北省教育厅科学研究计划项目(2007429)
