具有混合边条件三维半导体问题的特征差分方法和L∞模估计

CHARACTERISTIC DIFFERENCE METHODS AND L ∞ ERROR ESTIMATE FOR THE SEMI CONDUCTOR DEVICE OF THREE DIMENSIONS WITH MIXED BOUNDARY CONDITION

对具有混合边条件的三维半导体问题的电子和空穴浓度方程进行了研究，采用特征差分计算方法，并用最大模原理得到其Ｌ∞模误差估计．在对流占优问题中，特征差分方法与传统计算方法相比，有比较小的截断误差，且格式简单，可以对时间采用大步长计算．

Characteristic difference methods are used to treat a problem of electron and hole concentrations equation of semionductor device of three dimensions with mixed boundary condition.Optimal order error estimates in L ∞ norm are derived.These schemes have much smaller time truncation errors and are able to use longer time steps than those of standard methods.Also,the calculation is simple.